IKP20N60TA

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Specifikācijas

Kategorijas
IGBT Transistors
Collector- Emitter Voltage VCEO Max
600 V
Collector-Emitter Saturation Voltage
1.5 V
Configuration
Single
Continuous Collector Current at 25 C
40 A
Gate-Emitter Leakage Current
100 nA
Maximum Gate Emitter Voltage
20 V
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 40 C
Mounting Style
Through Hole
Package / Case
TO-247-3
Packaging
Tube
Part # Aliases
Pd - Power Dissipation
156 W
Product Type
IGBT Transistors
Series
TRENCHSTOP
Technology
SI
Tradename
TRENCHSTOP
Unit Weight

Jaunākās atsauksmes

goods very well received very good quality

Thank You all fine, packed very well

Perfectly.

Everything is excellent! recommend this seller!

Works. Find the price of this product is very good

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