IKP20N60H3

Attēli ir tikai norādei
Daļas numurs
IKP20N60H3
Kategorijas
IGBT Transistors
RoHS
Datu lapas
Apraksts
IGBT Transistors 600V HI SPEED SW IGBT

Specifikācijas

Kategorijas
IGBT Transistors
Collector- Emitter Voltage VCEO Max
600 V
Collector-Emitter Saturation Voltage
1.95 V
Configuration
Single
Continuous Collector Current at 25 C
40 A
Gate-Emitter Leakage Current
100 nA
Maximum Gate Emitter Voltage
20 V
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 40 C
Mounting Style
Through Hole
Package / Case
TO-220-3
Packaging
Tube
Part # Aliases
Pd - Power Dissipation
170 W
Product Type
IGBT Transistors
Series
HighSpeed 3
Technology
SI
Tradename
TRENCHSTOP
Unit Weight

Jaunākās atsauksmes

Properly packed, not damaged. Works well, voltage levels are stable. Recommend.

Works. Find the price of this product is very good

Order is very quickly, before Moscow flew for 12 days! Many thanks to the seller!

Thank you for the help in the selection of the correct driver, connect, works, not heated perfectly!

the photo in comparison with cheap. Delivery fast

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