- Daļas numurs
- IKP20N60T
- Kategorijas
- IGBT Transistors
- RoHS
- Datu lapas
- Apraksts
- IGBT Transistors LOW LOSS DuoPack 600V 20A
IKP20N60T
Attēli ir tikai norādei
Specifikācijas
- Kategorijas
- IGBT Transistors
- Collector- Emitter Voltage VCEO Max
- 600 V
- Collector-Emitter Saturation Voltage
- 1.5 V
- Configuration
- Single
- Continuous Collector Current at 25 C
- 41 A
- Gate-Emitter Leakage Current
- 100 nA
- Height
- 9.25 mm
- Length
- 10 mm
- Maximum Gate Emitter Voltage
- 20 V
- Maximum Operating Temperature
- + 175 C
- Minimum Operating Temperature
- - 40 C
- Mounting Style
- Through Hole
- Package / Case
- TO-220-3
- Packaging
- Tube
- Part # Aliases
- Pd - Power Dissipation
- 166 W
- Product Type
- IGBT Transistors
- Series
- TRENCHSTOP IGBT
- Technology
- SI
- Tradename
- TRENCHSTOP
- Unit Weight
- Width
- 4.4 mm
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Jaunākās atsauksmes
Properly packed, not damaged. Works well, voltage levels are stable. Recommend.
Paolo Giazzi
Works. Find the price of this product is very good
Maxim Krasnov
Order is very quickly, before Moscow flew for 12 days! Many thanks to the seller!
Rasim Abdullayev
Thank you for the help in the selection of the correct driver, connect, works, not heated perfectly!
สิทธิศักดิ์ วันดี
the photo in comparison with cheap. Delivery fast
Kaido Kevvai
Jums var patikt
Cilvēki skatās IKP20N60T, tad nopirka
IKP20N60T Jaunumi
03/14/2023
03/13/2023
03/13/2023
Saistītie atslēgvārdi IKP2
- IKP20N60T Integrēta
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- IKP20N60T PDF datu lapa
- IKP20N60T Datu lapas
- IKP20N60T Daļa. \ T
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- IKP20N60T Lejupielādēt PDF failu
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- IKP20N60T Cena
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- IKP20N60T Attēls
- IKP20N60T Bilde
- IKP20N60T Inventarizācija
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- IKP20N60T Bez svina
- IKP20N60T Specifikācija
- IKP20N60T Karstie piedāvājumi
- IKP20N60T Break cena
- IKP20N60T Tehniskie dati
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