- Daļas numurs
- IKD06N60RAATMA2
- Kategorijas
- IGBT Transistors
- RoHS
- Datu lapas
- Apraksts
- IGBT Transistors IGBT PRODUCTS
IKD06N60RAATMA2
Attēli ir tikai norādei
Specifikācijas
- Kategorijas
- IGBT Transistors
- Collector- Emitter Voltage VCEO Max
- 600 V
- Collector-Emitter Saturation Voltage
- 1.65 V
- Configuration
- Single
- Continuous Collector Current at 25 C
- 12 A
- Gate-Emitter Leakage Current
- 100 nA
- Maximum Gate Emitter Voltage
- 20 V
- Maximum Operating Temperature
- + 175 C
- Minimum Operating Temperature
- - 40 C
- Mounting Style
- SMD/SMT
- Package / Case
- TO-252-3
- Packaging
- Reel
- Part # Aliases
- Pd - Power Dissipation
- 100 W
- Product Type
- IGBT Transistors
- Series
- RC
- Technology
- SI
- Tradename
- TRENCHSTOP
Porduct kategorija
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46,355 Produkti
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55,700 Produkti
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Test & Measurement
20,391 Produkti
Jaunākās atsauksmes
goods very well received very good quality
Fabrice Cubaynes
Takes 8 days to Japan. Good!
Alex Fragkos
packed pretty good, all is ok,-seller.
Julianah Yungkim
Thank You all fine, packed very well
Ulrich Bundke
Decent quality, not минвелл certainly, but enough decent
TEIXEIRA
Jums var patikt
Cilvēki skatās IKD06N60RAATMA2, tad nopirka
IKD06N60RAATMA2 Jaunumi
03/14/2023
03/13/2023
03/13/2023
Saistītie atslēgvārdi IKD0
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- IKD06N60RAATMA2 Specifikācija
- IKD06N60RAATMA2 Karstie piedāvājumi
- IKD06N60RAATMA2 Break cena
- IKD06N60RAATMA2 Tehniskie dati
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