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MJD31C1G

MJD31C1G
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Specifikācijas

Kategorijas
Bipolar Transistors - BJT
Collector- Base Voltage VCBO
100 V
Collector- Emitter Voltage VCEO Max
100 V
Collector-Emitter Saturation Voltage
1.2 V
Configuration
Single
Continuous Collector Current
3 A
DC Collector/Base Gain hfe Min
25
Emitter- Base Voltage VEBO
5 V
Gain Bandwidth Product fT
3 MHz
Height
2.38 mm
Length
6.73 mm
Maximum DC Collector Current
3 A
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Mounting Style
Through Hole
Package / Case
IPAK-3
Packaging
Tube
Pd - Power Dissipation
1.56 W
Product Type
BJTs - Bipolar Transistors
Series
MJD31C
Technology
SI
Transistor Polarity
NPN
Unit Weight
Width
6.22 mm

Porduct kategorija

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Jaunākās atsauksmes

Uzrakstiet savu Reivew
Article fits the description on the website and it is good quality. Free in 5 days in France well protected in a bubble envelope. Each value is row in a small bag zip. Trés satisfied with my purchase, I recommend this article and this supplier.
Product well received and very quickly for France, all is in order in perfect condition. Thank you. I recommend this company.
Perfectly.
The goods are OK, thank you dealers.
Thank you for the help in the selection of the correct driver, connect, works, not heated perfectly!
Vairāk

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Saistītie atslēgvārdi MJD3

  • MJD31C1G Integrēta
  • MJD31C1G RoHS
  • MJD31C1G PDF datu lapa
  • MJD31C1G Datu lapas
  • MJD31C1G Daļa. \ T
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  • MJD31C1G Izplatītājs
  • MJD31C1G PDF
  • MJD31C1G Komponents
  • MJD31C1G IC
  • MJD31C1G Lejupielādēt PDF failu
  • MJD31C1G Lejupielādēt datu lapu
  • MJD31C1G Piegāde
  • MJD31C1G Piegādātājs
  • MJD31C1G Cena
  • MJD31C1G Datu lapas
  • MJD31C1G Attēls
  • MJD31C1G Bilde
  • MJD31C1G Inventarizācija
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  • MJD31C1G Bez svina
  • MJD31C1G Specifikācija
  • MJD31C1G Karstie piedāvājumi
  • MJD31C1G Break cena
  • MJD31C1G Tehniskie dati

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