Daļas numurs MJD31CT4 Kategorijas Bipolar Transistors - BJT RoHS Datu lapas MJD31CT4 Apraksts Bipolar Transistors - BJT NPN Gen Pur Switch
Kategorijas Bipolar Transistors - BJT Collector- Base Voltage VCBO 100 V Collector- Emitter Voltage VCEO Max 100 V Collector-Emitter Saturation Voltage 1.2 V Configuration Single Continuous Collector Current 3 A DC Collector/Base Gain hfe Min 20 Emitter- Base Voltage VEBO 5 V Height 2.4 mm Length 6.6 mm Maximum DC Collector Current 3 A Maximum Operating Temperature + 150 C Minimum Operating Temperature - 65 C Mounting Style SMD/SMT Package / Case TO-252-3 Packaging Reel Packaging Cut Tape Packaging MouseReel Pd - Power Dissipation 15 W Product Type BJTs - Bipolar Transistors Series MJD31C Technology SI Transistor Polarity NPN Unit Weight Width 6.2 mm