Daļas numurs MJD31CRLG Kategorijas Bipolar Transistors - BJT RoHS Datu lapas MJD31CRLG Apraksts Bipolar Transistors - BJT 3A 100V 15W NPN
Kategorijas Bipolar Transistors - BJT Collector- Base Voltage VCBO 100 V Collector- Emitter Voltage VCEO Max 100 V Collector-Emitter Saturation Voltage 1.2 V Configuration Single Continuous Collector Current 3 A DC Collector/Base Gain hfe Min 25 Emitter- Base Voltage VEBO 5 V Gain Bandwidth Product fT 3 MHz Height 2.38 mm Length 6.73 mm Maximum DC Collector Current 3 A Maximum Operating Temperature + 150 C Minimum Operating Temperature - 65 C Mounting Style SMD/SMT Package / Case TO-252-3 Packaging Reel Packaging Cut Tape Packaging MouseReel Pd - Power Dissipation 1.56 W Product Type BJTs - Bipolar Transistors Series MJD31C Technology SI Transistor Polarity NPN Unit Weight Width 6.22 mm