MJD350T4

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Specifikācijas

Kategorijas
Bipolar Transistors - BJT
Collector- Base Voltage VCBO
300 V
Collector- Emitter Voltage VCEO Max
300 V
Configuration
Single
Continuous Collector Current
0.5 A
DC Collector/Base Gain hfe Min
30
DC Current Gain hFE Max
240
Emitter- Base Voltage VEBO
3 V
Height
2.4 mm
Length
6.6 mm
Maximum DC Collector Current
750 mA
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Package / Case
TO-252-3
Packaging
Reel
Packaging
Cut Tape
Packaging
MouseReel
Pd - Power Dissipation
15 W
Product Type
BJTs - Bipolar Transistors
Series
MJD350
Technology
SI
Transistor Polarity
PNP
Unit Weight
Width
6.2 mm

Jaunākās atsauksmes

Very good and reliable device, thank you, keep it rolling! Highly recommend to buy!

Good product. Very small and well built. Ii is not produce any kind of. nterferences RFi. Quick delivery

I received the product right, thank you very much 2018/12/03 ★★★★★

and whole all right. the features no more функционалу check.

Product Description. highly recommend.

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