MJD32CJ

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Specifikācijas

Kategorijas
Bipolar Transistors - BJT
Collector- Base Voltage VCBO
- 100 V
Collector- Emitter Voltage VCEO Max
- 100 V
Collector-Emitter Saturation Voltage
1.2 V
Configuration
Single
Continuous Collector Current
- 3 A
DC Collector/Base Gain hfe Min
10
DC Current Gain hFE Max
50
Emitter- Base Voltage VEBO
- 6 V
Gain Bandwidth Product fT
3 MHz
Maximum DC Collector Current
- 5 A
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Package / Case
DPAK-3
Packaging
Reel
Packaging
Cut Tape
Part # Aliases
Pd - Power Dissipation
15 W
Product Type
BJTs - Bipolar Transistors
Technology
SI
Transistor Polarity
PNP

Jaunākās atsauksmes

Shipped quickly, it was about 1 weeks in Krasnodar. Until the check operation, but to look at everything together

fast delivery

Works. Recommend

Long Service and Russia!

Seems well have not tested

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