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MJD31CT4G

MJD31CT4G
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Specifikācijas

Kategorijas
Bipolar Transistors - BJT
Collector- Base Voltage VCBO
100 V
Collector- Emitter Voltage VCEO Max
100 V
Collector-Emitter Saturation Voltage
1.2 V
Configuration
Single
Continuous Collector Current
3 A
DC Collector/Base Gain hfe Min
25
Emitter- Base Voltage VEBO
5 V
Gain Bandwidth Product fT
3 MHz
Height
2.38 mm
Length
6.73 mm
Maximum DC Collector Current
3 A
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Package / Case
TO-252-3
Packaging
Reel
Packaging
Cut Tape
Packaging
MouseReel
Pd - Power Dissipation
1.56 W
Product Type
BJTs - Bipolar Transistors
Series
MJD31C
Technology
SI
Transistor Polarity
NPN
Unit Weight
Width
6.22 mm

Porduct kategorija

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Jaunākās atsauksmes

Uzrakstiet savu Reivew
My package arrived wet, not know where occurs this fact, but working all right
Hello! Order received, very happy. Thank you very much!
packed pretty good, all is ok,-seller.
Product well received and very quickly for France, all is in order in perfect condition. Thank you. I recommend this company.
Good product. Very small and well built. Ii is not produce any kind of. nterferences RFi. Quick delivery
Vairāk

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Saistītie atslēgvārdi MJD3

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  • MJD31CT4G RoHS
  • MJD31CT4G PDF datu lapa
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  • MJD31CT4G Daļa. \ T
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  • MJD31CT4G Komponents
  • MJD31CT4G IC
  • MJD31CT4G Lejupielādēt PDF failu
  • MJD31CT4G Lejupielādēt datu lapu
  • MJD31CT4G Piegāde
  • MJD31CT4G Piegādātājs
  • MJD31CT4G Cena
  • MJD31CT4G Datu lapas
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  • MJD31CT4G Specifikācija
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