MJD32CT4

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Specifikācijas

Kategorijas
Bipolar Transistors - BJT
Collector- Base Voltage VCBO
100 V
Collector- Emitter Voltage VCEO Max
100 V
Collector-Emitter Saturation Voltage
- 1.2 V
Configuration
Single
Continuous Collector Current
3 A
DC Collector/Base Gain hfe Min
20
Emitter- Base Voltage VEBO
5 V
Height
2.4 mm
Length
6.6 mm
Maximum DC Collector Current
3 A
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Package / Case
TO-252-3
Packaging
Reel
Packaging
Cut Tape
Packaging
MouseReel
Pd - Power Dissipation
15 W
Product Type
BJTs - Bipolar Transistors
Series
MJD32C
Technology
SI
Transistor Polarity
PNP
Unit Weight
Width
6.2 mm

Jaunākās atsauksmes

Very good!

Quick delivery. Secure packing. Excellent product. Thank you

Thank you! Received consistent. Long Service. Walking in Russia! Seller recommend!!!

Perfectly.

Everything is excellent! recommend this seller!

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