Daļas numurs MJD31CJ Kategorijas Bipolar Transistors - BJT RoHS Datu lapas MJD31CJ Apraksts Bipolar Transistors - BJT MJD31C/SOT428/DPAK
Kategorijas Bipolar Transistors - BJT Collector- Base Voltage VCBO 100 V Collector- Emitter Voltage VCEO Max 100 V Collector-Emitter Saturation Voltage 1.2 V Configuration Single Continuous Collector Current 3 A DC Collector/Base Gain hfe Min 10 DC Current Gain hFE Max 50 Emitter- Base Voltage VEBO 6 V Gain Bandwidth Product fT 3 MHz Maximum DC Collector Current 5 A Maximum Operating Temperature + 150 C Minimum Operating Temperature - 55 C Mounting Style SMD/SMT Package / Case DPAK-3 Packaging Cut Tape Packaging Reel Part # Aliases Pd - Power Dissipation 15 W Product Type BJTs - Bipolar Transistors Technology SI Transistor Polarity NPN