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IKD04N60RFATMA1

IKD04N60RFATMA1
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Specifikācijas

Kategorijas
IGBT Transistors
Collector- Emitter Voltage VCEO Max
600 V
Collector-Emitter Saturation Voltage
2.2 V
Configuration
Single
Continuous Collector Current at 25 C
8 A
Gate-Emitter Leakage Current
100 nA
Height
2.41 mm
Length
6.73 mm
Maximum Gate Emitter Voltage
20 V
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 40 C
Mounting Style
SMD/SMT
Package / Case
TO-252-3
Packaging
Reel
Packaging
Cut Tape
Packaging
MouseReel
Part # Aliases
Pd - Power Dissipation
75 W
Product Type
IGBT Transistors
Series
RC
Technology
SI
Tradename
TRENCHSTOP
Width
6.22 mm

Porduct kategorija

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Jaunākās atsauksmes

Uzrakstiet savu Reivew
Everything is excellent! recommend this seller!
Shipped quickly, it was about 1 weeks in Krasnodar. Until the check operation, but to look at everything together
Works. Find the price of this product is very good
fast delivery
Fast shippng. Good quality. I recomend this seller.
Vairāk

Jums var patikt

IKD03N60RFAATMA1
IKD03N60RFAATMA1
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IKD03N60RFATMA1
IKD03N60RFATMA1
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IKD04N60RA
IKD04N60RA
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IKD04N60RAATMA1
IKD04N60RAATMA1
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Cilvēki skatās IKD04N60RFATMA1, tad nopirka

IKD03N60RFAATMA1
IKD03N60RFAATMA1
Izlase Uz Bom
IKD03N60RFATMA1
IKD03N60RFATMA1
Izlase Uz Bom
IKD04N60RA
IKD04N60RA
Izlase Uz Bom
IKD04N60RAATMA1
IKD04N60RAATMA1
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IKD04N60RFATMA1 Jaunumi

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