Daļas numurs IKD06N60RATMA1 Kategorijas IGBT Transistors RoHS Datu lapas IKD06N60RATMA1 Apraksts IGBT Transistors IGBT w/ INTG DIODE 600V 12A
Kategorijas IGBT Transistors Collector- Emitter Voltage VCEO Max 600 V Collector-Emitter Saturation Voltage 1.65 V Configuration Single Continuous Collector Current at 25 C 12 A Gate-Emitter Leakage Current 100 nA Maximum Gate Emitter Voltage 20 V Maximum Operating Temperature + 175 C Minimum Operating Temperature - 40 C Mounting Style SMD/SMT Package / Case TO-252-3 Packaging Reel Packaging Cut Tape Packaging MouseReel Part # Aliases Pd - Power Dissipation 100 W Product Type IGBT Transistors Series RC Technology SI Tradename TRENCHSTOP