Daļas numurs SQ1470AEH-T1_GE3 Kategorijas MOSFET RoHS Datu lapas SQ1470AEH-T1_GE3 Apraksts MOSFET 30V Vds +/-12V Vgs AEC-Q101 Qualified
Kategorijas MOSFET Channel Mode Enhancement Configuration Single Fall Time 8 ns Forward Transconductance - Min 14 S Height 1 mm Id - Continuous Drain Current 1.7 A Length 2.1 mm Maximum Operating Temperature + 175 C Minimum Operating Temperature - 55 C Mounting Style SMD/SMT Number of Channels 1 Channel Package / Case SOT-363-6 Packaging MouseReel Packaging Reel Packaging Cut Tape Pd - Power Dissipation 3.3 W Product Type MOSFET Qg - Gate Charge 5.2 nC Qualification AEC-Q101 Rds On - Drain-Source Resistance 45 mOhms Rise Time 13 ns Series SQ Technology SI Tradename TrenchFET Transistor Polarity N-Channel Transistor Type 1 N-Channel Typical Turn-Off Delay Time 14 ns Typical Turn-On Delay Time 10 ns Unit Weight Vds - Drain-Source Breakdown Voltage 30 V Vgs - Gate-Source Voltage 12 V Vgs th - Gate-Source Threshold Voltage 600 mV Width 1.25 mm