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MJD200RLG

MJD200RLG
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Specifikācijas

Kategorijas
Bipolar Transistors - BJT
Collector- Base Voltage VCBO
40 V
Collector- Emitter Voltage VCEO Max
25 V
Collector-Emitter Saturation Voltage
1.8 V
Configuration
Single
Continuous Collector Current
5 A
DC Collector/Base Gain hfe Min
70
Emitter- Base Voltage VEBO
8 V
Gain Bandwidth Product fT
65 MHz
Height
2.38 mm
Length
6.73 mm
Maximum DC Collector Current
5 A
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Package / Case
TO-252-3
Packaging
Cut Tape
Packaging
MouseReel
Packaging
Reel
Pd - Power Dissipation
12.5 W
Product Type
BJTs - Bipolar Transistors
Series
MJD200
Technology
SI
Transistor Polarity
NPN
Width
6.22 mm

Porduct kategorija

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Jaunākās atsauksmes

Uzrakstiet savu Reivew
Article fits the description on the website and it is good quality. Free in 5 days in France well protected in a bubble envelope. Each value is row in a small bag zip. Trés satisfied with my purchase, I recommend this article and this supplier.
Takes 8 days to Japan. Good!
Long Service and Russia!
Great product. Arrived ahead of time. Thank you
Good material. Great seller, efficient and insurance. Ok
Vairāk

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Saistītie atslēgvārdi MJD2

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