- Daļas numurs
- MJD200G
- Kategorijas
- Bipolar Transistors - BJT
- RoHS
- Datu lapas
- Apraksts
- Bipolar Transistors - BJT 5A 25V 12.5W NPN
MJD200G
Attēli ir tikai norādei
Specifikācijas
- Kategorijas
- Bipolar Transistors - BJT
- Collector- Base Voltage VCBO
- 40 V
- Collector- Emitter Voltage VCEO Max
- 25 V
- Collector-Emitter Saturation Voltage
- 1.8 V
- Configuration
- Single
- Continuous Collector Current
- 5 A
- DC Collector/Base Gain hfe Min
- 70
- Emitter- Base Voltage VEBO
- 8 V
- Gain Bandwidth Product fT
- 65 MHz
- Height
- 2.38 mm
- Length
- 6.73 mm
- Maximum DC Collector Current
- 5 A
- Maximum Operating Temperature
- + 150 C
- Minimum Operating Temperature
- - 65 C
- Mounting Style
- SMD/SMT
- Package / Case
- TO-252-3
- Packaging
- Tube
- Pd - Power Dissipation
- 12.5 W
- Product Type
- BJTs - Bipolar Transistors
- Series
- MJD200
- Technology
- SI
- Transistor Polarity
- NPN
- Unit Weight
- Width
- 6.22 mm
Porduct kategorija
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Jaunākās atsauksmes
fast delivery, item as described, thanks!!
Sandra Scheck
Goods came in two weeks. Well packed. Track number tracked
kwon yong sik
fast delivery
Mike Ibarra
Fast shippng. Good quality. I recomend this seller.
Raymond de Vries
The timer is running. 10 PCS. Packed properly.
Karina Erdmann
MJD200G Jaunumi
03/14/2023
03/13/2023
03/13/2023
Saistītie atslēgvārdi MJD2
- MJD200G Integrēta
- MJD200G RoHS
- MJD200G PDF datu lapa
- MJD200G Datu lapas
- MJD200G Daļa. \ T
- MJD200G Pirkt
- MJD200G Izplatītājs
- MJD200G PDF
- MJD200G Komponents
- MJD200G IC
- MJD200G Lejupielādēt PDF failu
- MJD200G Lejupielādēt datu lapu
- MJD200G Piegāde
- MJD200G Piegādātājs
- MJD200G Cena
- MJD200G Datu lapas
- MJD200G Attēls
- MJD200G Bilde
- MJD200G Inventarizācija
- MJD200G Krājumi
- MJD200G Oriģināls
- MJD200G Lētākais
- MJD200G Teicami
- MJD200G Bez svina
- MJD200G Specifikācija
- MJD200G Karstie piedāvājumi
- MJD200G Break cena
- MJD200G Tehniskie dati
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