MJD210G

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Specifikācijas

Kategorijas
Bipolar Transistors - BJT
Collector- Base Voltage VCBO
40 V
Collector- Emitter Voltage VCEO Max
25 V
Collector-Emitter Saturation Voltage
1.8 V
Configuration
Single
Continuous Collector Current
5 A
DC Collector/Base Gain hfe Min
70
Emitter- Base Voltage VEBO
8 V
Gain Bandwidth Product fT
65 MHz
Height
2.38 mm
Length
6.73 mm
Maximum DC Collector Current
5 A
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Package / Case
TO-252-3
Packaging
Tube
Pd - Power Dissipation
12.5 W
Product Type
BJTs - Bipolar Transistors
Series
MJD210
Technology
SI
Transistor Polarity
PNP
Unit Weight
Width
6.22 mm

Jaunākās atsauksmes

goods very well received very good quality

all exactly and work. радиолюбителя useful set to, thank you)

Quickly came to CET, all in one package. Look at the rules

High Quality driver, works excellent. It came to Moscow for 7 days.

Good product. Very small and well built. Ii is not produce any kind of. nterferences RFi. Quick delivery

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