Daļas numurs MJD200T4G Kategorijas Bipolar Transistors - BJT RoHS Datu lapas MJD200T4G Apraksts Bipolar Transistors - BJT 5A 25V 12.5W NPN
Kategorijas Bipolar Transistors - BJT Collector- Base Voltage VCBO 40 V Collector- Emitter Voltage VCEO Max 25 V Collector-Emitter Saturation Voltage 1.8 V Configuration Single Continuous Collector Current 5 A DC Collector/Base Gain hfe Min 70 Emitter- Base Voltage VEBO 8 V Gain Bandwidth Product fT 65 MHz Height 2.38 mm Length 6.73 mm Maximum DC Collector Current 5 A Maximum Operating Temperature + 150 C Minimum Operating Temperature - 65 C Mounting Style SMD/SMT Package / Case TO-252-3 Packaging Reel Packaging Cut Tape Packaging MouseReel Pd - Power Dissipation 12.5 W Product Type BJTs - Bipolar Transistors Series MJD200 Technology SI Transistor Polarity NPN Unit Weight Width 6.22 mm