Daļas numurs FF225R12ME3 Kategorijas IGBT Modules RoHS Datu lapas FF225R12ME3 Apraksts IGBT Modules N-CH 1.2KV 325A
Kategorijas IGBT Modules Collector- Emitter Voltage VCEO Max 1200 V Configuration Dual Continuous Collector Current at 25 C 325 A Height 17 mm Length 152 mm Maximum Gate Emitter Voltage 20 V Maximum Operating Temperature + 125 C Minimum Operating Temperature - 40 C Mounting Style Chassis Mount Package / Case Econo D Packaging Tray Part # Aliases Product IGBT Silicon Modules Product Type IGBT Modules Technology SI Width 62 mm