Daļas numurs FF225R12ME4 Kategorijas IGBT Modules RoHS Datu lapas FF225R12ME4 Apraksts IGBT Modules IGBT 1200V 225A
Kategorijas IGBT Modules Collector- Emitter Voltage VCEO Max 1200 V Collector-Emitter Saturation Voltage 2.15 V Continuous Collector Current at 25 C 225 A Gate-Emitter Leakage Current 400 nA Maximum Gate Emitter Voltage 20 V Maximum Operating Temperature + 150 C Minimum Operating Temperature - 40 C Mounting Style Chassis Mount Packaging Tray Part # Aliases Pd - Power Dissipation 1050 W Product IGBT Silicon Modules Product Type IGBT Modules Technology SI