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FF225R12ME4PB11BPSA1

FF225R12ME4PB11BPSA1
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Specifikācijas

Kategorijas
IGBT Modules
Collector- Emitter Voltage VCEO Max
1.2 kV
Collector-Emitter Saturation Voltage
1.85 V
Configuration
Dual
Continuous Collector Current at 25 C
225 A
Gate-Emitter Leakage Current
400 nA
Maximum Gate Emitter Voltage
20 V
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 40 C
Mounting Style
Press Fit
Package / Case
152 mm x 62.5 mm x 20.5 mm
Packaging
Tray
Part # Aliases
Pd - Power Dissipation
20 mW
Product
IGBT Silicon Modules
Product Type
IGBT Modules
Technology
SI

Porduct kategorija

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Jaunākās atsauksmes

Uzrakstiet savu Reivew
Empresa muy seria , el envió llego como veis en las fotos de manera muy segura , todos los componentes son de gran calidad , aconsejo TNT frente a DHL como compa?ía para el envió .
Properly packed, not damaged. Works well, voltage levels are stable. Recommend.
Shipped quickly, it was about 1 weeks in Krasnodar. Until the check operation, but to look at everything together
High Quality driver, works excellent. It came to Moscow for 7 days.
Decent quality, not минвелл certainly, but enough decent
Vairāk

Jums var patikt

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Cilvēki skatās FF225R12ME4PB11BPSA1, tad nopirka

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FF225R12ME4PB11BPSA1 Jaunumi

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