- Daļas numurs
- FF225R12ME4_B11
- Kategorijas
- IGBT Modules
- RoHS
- Datu lapas
- Apraksts
- IGBT Modules IGBT Module 225A 1200V
FF225R12ME4_B11
Specifikācijas
- Kategorijas
- IGBT Modules
- Collector- Emitter Voltage VCEO Max
- 1.2 kV
- Collector-Emitter Saturation Voltage
- 1.85 V
- Configuration
- Dual
- Continuous Collector Current at 25 C
- 225 A
- Gate-Emitter Leakage Current
- 400 nA
- Maximum Gate Emitter Voltage
- 20 V
- Maximum Operating Temperature
- + 150 C
- Minimum Operating Temperature
- - 40 C
- Mounting Style
- Press Fit
- Package / Case
- 152 mm x 62.5 mm x 20.5 mm
- Packaging
- Tray
- Part # Aliases
- Pd - Power Dissipation
- 1.05 kW
- Product
- IGBT Silicon Modules
- Product Type
- IGBT Modules
- Technology
- SI
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Jaunākās atsauksmes
The goods are OK, thank you dealers.
CHARLES SANTOS
Order is very quickly, before Moscow flew for 12 days! Many thanks to the seller!
Rasim Abdullayev
Looks good
Michael Beck
Good material. Great seller, efficient and insurance. Ok
Janos More
I received the product right, thank you very much 2018/12/03 ★★★★★
Haur Su
Jums var patikt
Cilvēki skatās FF225R12ME4_B11, tad nopirka
FF225R12ME4_B11 Jaunumi
03/14/2023
03/13/2023
03/13/2023
Saistītie atslēgvārdi FF22
- FF225R12ME4_B11 Integrēta
- FF225R12ME4_B11 RoHS
- FF225R12ME4_B11 PDF datu lapa
- FF225R12ME4_B11 Datu lapas
- FF225R12ME4_B11 Daļa. \ T
- FF225R12ME4_B11 Pirkt
- FF225R12ME4_B11 Izplatītājs
- FF225R12ME4_B11 PDF
- FF225R12ME4_B11 Komponents
- FF225R12ME4_B11 IC
- FF225R12ME4_B11 Lejupielādēt PDF failu
- FF225R12ME4_B11 Lejupielādēt datu lapu
- FF225R12ME4_B11 Piegāde
- FF225R12ME4_B11 Piegādātājs
- FF225R12ME4_B11 Cena
- FF225R12ME4_B11 Datu lapas
- FF225R12ME4_B11 Attēls
- FF225R12ME4_B11 Bilde
- FF225R12ME4_B11 Inventarizācija
- FF225R12ME4_B11 Krājumi
- FF225R12ME4_B11 Oriģināls
- FF225R12ME4_B11 Lētākais
- FF225R12ME4_B11 Teicami
- FF225R12ME4_B11 Bez svina
- FF225R12ME4_B11 Specifikācija
- FF225R12ME4_B11 Karstie piedāvājumi
- FF225R12ME4_B11 Break cena
- FF225R12ME4_B11 Tehniskie dati
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