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IGB50N60TATMA1

IGB50N60TATMA1
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Specifikācijas

Kategorijas
IGBT Transistors
Collector- Emitter Voltage VCEO Max
600 V
Collector-Emitter Saturation Voltage
1.5 V
Configuration
Single
Continuous Collector Current at 25 C
90 A
Gate-Emitter Leakage Current
100 nA
Maximum Gate Emitter Voltage
20 V
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 40 C
Mounting Style
SMD/SMT
Package / Case
TO-263-3
Packaging
Reel
Packaging
Cut Tape
Packaging
MouseReel
Part # Aliases
Pd - Power Dissipation
333 W
Product Type
IGBT Transistors
Series
TRENCHSTOP IGBT
Technology
SI
Tradename
TRENCHSTOP
Unit Weight

Porduct kategorija

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Jaunākās atsauksmes

Uzrakstiet savu Reivew
it is safe and sound all, thank you seller!
Order received all the rules. Ощень мана quickly, to Yakutia 5 day, respect, not tupit. Packed in standard. Driver in the form of niche, soldering standards, not tested. And diode, he ordered. Orders joined fellow
Goods came in two weeks. Well packed. Track number tracked
the photo in comparison with cheap. Delivery fast
Shipping bіlshe mіsyatsya. Chi pratsyuyut not perevіryav.
Vairāk

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Saistītie atslēgvārdi IGB5

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  • IGB50N60TATMA1 PDF
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  • IGB50N60TATMA1 Specifikācija
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  • IGB50N60TATMA1 Break cena
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