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IGB50N65H5ATMA1

IGB50N65H5ATMA1
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Specifikācijas

Kategorijas
IGBT Transistors
Collector- Emitter Voltage VCEO Max
650 V
Collector-Emitter Saturation Voltage
1.65 V
Configuration
Single
Continuous Collector Current at 25 C
80 A
Continuous Collector Current Ic Max
80 A
Gate-Emitter Leakage Current
100 nA
Maximum Gate Emitter Voltage
20 V
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 40 C
Mounting Style
SMD/SMT
Package / Case
TO-263-3
Packaging
Reel
Packaging
Cut Tape
Part # Aliases
Pd - Power Dissipation
270 W
Product Type
IGBT Transistors
Series
TRENCHSTOPâ?¢5
Technology
SI
Tradename
TRENCHSTOP

Porduct kategorija

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Jaunākās atsauksmes

Uzrakstiet savu Reivew
fast delivery, item as described, thanks!!
Perfectly.
fast delivery
Order is very quickly, before Moscow flew for 12 days! Many thanks to the seller!
goods delivered was отслеживался very fast (башкирию 7 days) excellent дошло seller in excellent condition all recommend!!!!
Vairāk

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