- Daļas numurs
- IGB50N65S5ATMA1
- Kategorijas
- IGBT Transistors
- RoHS
- Datu lapas
- Apraksts
- IGBT Transistors IGBT PRODUCTS
IGB50N65S5ATMA1
Attēli ir tikai norādei
Specifikācijas
- Kategorijas
- IGBT Transistors
- Collector- Emitter Voltage VCEO Max
- 650 V
- Collector-Emitter Saturation Voltage
- 1.35 V
- Configuration
- Single
- Continuous Collector Current at 25 C
- 80 A
- Continuous Collector Current Ic Max
- 80 A
- Gate-Emitter Leakage Current
- 50 uA
- Maximum Gate Emitter Voltage
- 20 V
- Maximum Operating Temperature
- + 175 C
- Minimum Operating Temperature
- - 40 C
- Mounting Style
- SMD/SMT
- Package / Case
- TO-263-3
- Packaging
- Reel
- Packaging
- Cut Tape
- Part # Aliases
- Pd - Power Dissipation
- 270 W
- Product Type
- IGBT Transistors
- Series
- TRENCHSTOPâ?¢5
- Technology
- SI
- Tradename
- TRENCHSTOP
Porduct kategorija
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Jaunākās atsauksmes
Works. Recommend
Rajiv
Long Service and Russia!
Alex Yu
Everything is fine!
Jane Doe
Great product. Arrived ahead of time. Thank you
Alexey Petrov
Good material. Great seller, efficient and insurance. Ok
Janos More
Jums var patikt
Cilvēki skatās IGB50N65S5ATMA1, tad nopirka
IGB50N65S5ATMA1 Jaunumi
03/14/2023
03/13/2023
03/13/2023
Saistītie atslēgvārdi IGB5
- IGB50N65S5ATMA1 Integrēta
- IGB50N65S5ATMA1 RoHS
- IGB50N65S5ATMA1 PDF datu lapa
- IGB50N65S5ATMA1 Datu lapas
- IGB50N65S5ATMA1 Daļa. \ T
- IGB50N65S5ATMA1 Pirkt
- IGB50N65S5ATMA1 Izplatītājs
- IGB50N65S5ATMA1 PDF
- IGB50N65S5ATMA1 Komponents
- IGB50N65S5ATMA1 IC
- IGB50N65S5ATMA1 Lejupielādēt PDF failu
- IGB50N65S5ATMA1 Lejupielādēt datu lapu
- IGB50N65S5ATMA1 Piegāde
- IGB50N65S5ATMA1 Piegādātājs
- IGB50N65S5ATMA1 Cena
- IGB50N65S5ATMA1 Datu lapas
- IGB50N65S5ATMA1 Attēls
- IGB50N65S5ATMA1 Bilde
- IGB50N65S5ATMA1 Inventarizācija
- IGB50N65S5ATMA1 Krājumi
- IGB50N65S5ATMA1 Oriģināls
- IGB50N65S5ATMA1 Lētākais
- IGB50N65S5ATMA1 Teicami
- IGB50N65S5ATMA1 Bez svina
- IGB50N65S5ATMA1 Specifikācija
- IGB50N65S5ATMA1 Karstie piedāvājumi
- IGB50N65S5ATMA1 Break cena
- IGB50N65S5ATMA1 Tehniskie dati
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