Daļas numurs IGB50N60T Kategorijas IGBT Transistors RoHS Datu lapas IGB50N60T Apraksts IGBT Transistors LOW LOSS IGBT TECH 600V 50A
Kategorijas IGBT Transistors Collector- Emitter Voltage VCEO Max 600 V Collector-Emitter Saturation Voltage 1.5 V Configuration Single Continuous Collector Current at 25 C 90 A Gate-Emitter Leakage Current 100 nA Height 4.4 mm Length 10.25 mm Maximum Gate Emitter Voltage 20 V Maximum Operating Temperature + 175 C Minimum Operating Temperature - 40 C Mounting Style SMD/SMT Package / Case TO-263-3 Packaging Reel Packaging Cut Tape Packaging MouseReel Part # Aliases Pd - Power Dissipation 333 W Product Type IGBT Transistors Series TRENCHSTOP IGBT Technology SI Tradename TRENCHSTOP Unit Weight Width 9.9 mm