- Daļas numurs
- IKD15N60RFAATMA1
- Kategorijas
- IGBT Transistors
- RoHS
- Datu lapas
- Apraksts
- IGBT Transistors IGBT PRODUCTS
IKD15N60RFAATMA1
Attēli ir tikai norādei
Specifikācijas
- Kategorijas
- IGBT Transistors
- Collector- Emitter Voltage VCEO Max
- 600 V
- Collector-Emitter Saturation Voltage
- 2.2 V
- Configuration
- Single
- Continuous Collector Current at 25 C
- 30 A
- Gate-Emitter Leakage Current
- 100 nA
- Maximum Gate Emitter Voltage
- 20 V
- Maximum Operating Temperature
- + 175 C
- Minimum Operating Temperature
- - 40 C
- Mounting Style
- SMD/SMT
- Package / Case
- TO-252-3
- Packaging
- Reel
- Packaging
- Cut Tape
- Packaging
- MouseReel
- Part # Aliases
- Pd - Power Dissipation
- 240 W
- Product Type
- IGBT Transistors
- Series
- RC
- Technology
- SI
- Tradename
- TRENCHSTOP
Porduct kategorija
Circuit Protection
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2,137,436 Produkti
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103,645 Produkti
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21,131 Produkti
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46,355 Produkti
Industrial Automation
55,700 Produkti
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67,469 Produkti
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76,118 Produkti
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2,029,037 Produkti
Power
278,174 Produkti
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575,056 Produkti
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61,386 Produkti
Test & Measurement
20,391 Produkti
Jaunākās atsauksmes
Teşekkürler
Ashir Hussain
Yes, they are all here. :)
sudheer kumar sirra
Product well received and very quickly for France, all is in order in perfect condition. Thank you. I recommend this company.
Dane Gogic
Shipping a little 1 weeks, normal packing, the procedure is complete.
dennis kraft
The goods are OK, thank you dealers.
CHARLES SANTOS
Jums var patikt
Cilvēki skatās IKD15N60RFAATMA1, tad nopirka
IKD15N60RFAATMA1 Jaunumi
03/14/2023
03/13/2023
03/13/2023
Saistītie atslēgvārdi IKD1
- IKD15N60RFAATMA1 Integrēta
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- IKD15N60RFAATMA1 Specifikācija
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