- Daļas numurs
- IKD15N60RAATMA1
- Kategorijas
- IGBT Transistors
- RoHS
- Datu lapas
- Apraksts
- IGBT Transistors IGBT PRODUCTS
IKD15N60RAATMA1
Attēli ir tikai norādei
Specifikācijas
- Kategorijas
- IGBT Transistors
- Collector- Emitter Voltage VCEO Max
- 600 V
- Collector-Emitter Saturation Voltage
- 1.65 V
- Configuration
- Single
- Continuous Collector Current at 25 C
- 30 A
- Gate-Emitter Leakage Current
- 100 nA
- Maximum Gate Emitter Voltage
- 20 V
- Maximum Operating Temperature
- + 175 C
- Minimum Operating Temperature
- - 40 C
- Mounting Style
- SMD/SMT
- Package / Case
- TO-252-3
- Packaging
- Reel
- Part # Aliases
- Pd - Power Dissipation
- 250 W
- Product Type
- IGBT Transistors
- Series
- RC
- Technology
- SI
- Tradename
- TRENCHSTOP
Porduct kategorija
Circuit Protection
157,625 Produkti
Connectors
2,137,436 Produkti
Electromechanical
285,583 Produkti
Embedded Solutions
103,645 Produkti
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21,131 Produkti
Engineering Development Tools
46,355 Produkti
Industrial Automation
55,700 Produkti
LED Lighting
67,469 Produkti
Optoelectronics
76,118 Produkti
Passive Components
2,029,037 Produkti
Power
278,174 Produkti
Semiconductors
575,056 Produkti
Sensors
61,386 Produkti
Test & Measurement
20,391 Produkti
Jaunākās atsauksmes
Thank you! Received consistent. Long Service. Walking in Russia! Seller recommend!!!
Eitan Hammami
The goods are OK, thank you dealers.
CHARLES SANTOS
Thank you for the help in the selection of the correct driver, connect, works, not heated perfectly!
สิทธิศักดิ์ วันดี
Long Service and Russia!
Alex Yu
Everything is fine!
Jane Doe
Jums var patikt
Cilvēki skatās IKD15N60RAATMA1, tad nopirka
IKD15N60RAATMA1 Jaunumi
03/14/2023
03/13/2023
03/13/2023
Saistītie atslēgvārdi IKD1
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