- Daļas numurs
- IKP20N65H5
- Kategorijas
- IGBT Transistors
- RoHS
- Datu lapas
- Apraksts
- IGBT Transistors IGBT PRODUCTS TrenchStop 5
IKP20N65H5
Attēli ir tikai norādei
Specifikācijas
- Kategorijas
- IGBT Transistors
- Collector- Emitter Voltage VCEO Max
- 650 V
- Collector-Emitter Saturation Voltage
- 1.65 V
- Configuration
- Single
- Continuous Collector Current at 25 C
- 42 A
- Gate-Emitter Leakage Current
- 100 nA
- Height
- 15.95 mm
- Length
- 10.36 mm
- Maximum Gate Emitter Voltage
- 20 V
- Maximum Operating Temperature
- + 175 C
- Minimum Operating Temperature
- - 40 C
- Mounting Style
- Through Hole
- Operating Temperature Range
- - 40 C to + 175 C
- Package / Case
- TO-220-3
- Packaging
- Tube
- Part # Aliases
- Pd - Power Dissipation
- 125 W
- Product Type
- IGBT Transistors
- Series
- TRENCHSTOP 5 H5
- Technology
- SI
- Tradename
- TRENCHSTOP
- Unit Weight
- Width
- 4.57 mm
Porduct kategorija
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Jaunākās atsauksmes
Properly packed, not damaged. Works well, voltage levels are stable. Recommend.
Paolo Giazzi
fast delivery
Mike Ibarra
goods delivered was отслеживался very fast (башкирию 7 days) excellent дошло seller in excellent condition all recommend!!!!
Kathrin Leibfritz
Thank you for the help in the selection of the correct driver, connect, works, not heated perfectly!
สิทธิศักดิ์ วันดี
Long Service and Russia!
Alex Yu
Jums var patikt
Cilvēki skatās IKP20N65H5, tad nopirka
IKP20N65H5 Jaunumi
03/14/2023
03/13/2023
03/13/2023
Saistītie atslēgvārdi IKP2
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- IKP20N65H5 Tehniskie dati
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