- Daļas numurs
- IKD15N60RFATMA1
- Kategorijas
- IGBT Transistors
- RoHS
- Datu lapas
- Apraksts
- IGBT Transistors IGBT PRODUCTS
IKD15N60RFATMA1
Attēli ir tikai norādei
Specifikācijas
- Kategorijas
- IGBT Transistors
- Collector- Emitter Voltage VCEO Max
- 600 V
- Collector-Emitter Saturation Voltage
- 2.2 V
- Configuration
- Single
- Continuous Collector Current at 25 C
- 30 A
- Gate-Emitter Leakage Current
- 100 nA
- Maximum Gate Emitter Voltage
- 20 V
- Maximum Operating Temperature
- + 175 C
- Minimum Operating Temperature
- - 40 C
- Mounting Style
- SMD/SMT
- Package / Case
- TO-252-3
- Packaging
- Reel
- Packaging
- Cut Tape
- Packaging
- MouseReel
- Part # Aliases
- Pd - Power Dissipation
- 250 W
- Product Type
- IGBT Transistors
- Series
- RC
- Technology
- SI
- Tradename
- TRENCHSTOP
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Jaunākās atsauksmes
Отличный продавец . Рекомендую.+++
Yuriy Iovlev
Perfectly.
Sensofar Tech, SL
Fast shippng. Good quality. I recomend this seller.
Raymond de Vries
Works. Recommend
Rajiv
the photo in comparison with cheap. Delivery fast
Kaido Kevvai
Jums var patikt
Cilvēki skatās IKD15N60RFATMA1, tad nopirka
IKD15N60RFATMA1 Jaunumi
03/14/2023
03/13/2023
03/13/2023
Saistītie atslēgvārdi IKD1
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- IKD15N60RFATMA1 Bez svina
- IKD15N60RFATMA1 Specifikācija
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- IKD15N60RFATMA1 Break cena
- IKD15N60RFATMA1 Tehniskie dati
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