Daļas numurs IKP28N65ES5XKSA1 Kategorijas IGBT Transistors RoHS Datu lapas IKP28N65ES5XKSA1 Apraksts IGBT Transistors
Kategorijas IGBT Transistors Collector- Emitter Voltage VCEO Max 650 V Collector-Emitter Saturation Voltage 1.5 V Configuration Single Continuous Collector Current at 25 C 38 A Gate-Emitter Leakage Current 100 nA Maximum Gate Emitter Voltage 20 V Maximum Operating Temperature + 175 C Minimum Operating Temperature - 40 C Mounting Style Through Hole Package / Case TO-220-3 Packaging Tube Part # Aliases Pd - Power Dissipation 130 W Product Type IGBT Transistors Series IKP28 Technology SI Tradename TRENCHSTOP 5 S5