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IKD10N60RFATMA1

IKD10N60RFATMA1
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Specifikācijas

Kategorijas
IGBT Transistors
Collector- Emitter Voltage VCEO Max
600 V
Collector-Emitter Saturation Voltage
2.2 V
Configuration
Single
Continuous Collector Current at 25 C
20 A
Gate-Emitter Leakage Current
100 nA
Maximum Gate Emitter Voltage
20 V
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 40 C
Mounting Style
SMD/SMT
Package / Case
TO-252-3
Packaging
Reel
Packaging
Cut Tape
Packaging
MouseReel
Part # Aliases
Pd - Power Dissipation
150 W
Product Type
IGBT Transistors
Series
RC
Technology
SI
Tradename
TRENCHSTOP
Unit Weight

Porduct kategorija

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Jaunākās atsauksmes

Uzrakstiet savu Reivew
Very good and reliable device, thank you, keep it rolling! Highly recommend to buy!
Good product. Very small and well built. Ii is not produce any kind of. nterferences RFi. Quick delivery
I received the product right, thank you very much 2018/12/03 ★★★★★
and whole all right. the features no more функционалу check.
Product Description. highly recommend.
Vairāk

Jums var patikt

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Cilvēki skatās IKD10N60RFATMA1, tad nopirka

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IKD10N60RFATMA1 Jaunumi

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