MJD2955G

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Specifikācijas

Kategorijas
Bipolar Transistors - BJT
Collector- Base Voltage VCBO
70 V
Collector- Emitter Voltage VCEO Max
60 V
Collector-Emitter Saturation Voltage
1.1 V
Configuration
Single
Continuous Collector Current
10 A
DC Collector/Base Gain hfe Min
20
Emitter- Base Voltage VEBO
5 V
Gain Bandwidth Product fT
2 MHz
Height
2.38 mm
Length
6.73 mm
Maximum DC Collector Current
10 A
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Package / Case
TO-252-3
Packaging
Tube
Pd - Power Dissipation
20 W
Product Type
BJTs - Bipolar Transistors
Series
MJD2955
Technology
SI
Transistor Polarity
PNP
Unit Weight
Width
6.22 mm

Jaunākās atsauksmes

it is safe and sound all, thank you seller!

Product well received and very quickly for France, all is in order in perfect condition. Thank you. I recommend this company.

Order is very quickly, before Moscow flew for 12 days! Many thanks to the seller!

Long Service and Russia!

Good material. Great seller, efficient and insurance. Ok

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