- Daļas numurs
- MJD2955T4G
- Kategorijas
- Bipolar Transistors - BJT
- RoHS
- Datu lapas
- Apraksts
- Bipolar Transistors - BJT 10A 60V 20W PNP
MJD2955T4G
Attēli ir tikai norādei
Specifikācijas
- Kategorijas
- Bipolar Transistors - BJT
- Collector- Base Voltage VCBO
- 70 V
- Collector- Emitter Voltage VCEO Max
- 60 V
- Collector-Emitter Saturation Voltage
- 1.1 V
- Configuration
- Single
- Continuous Collector Current
- 10 A
- DC Collector/Base Gain hfe Min
- 20
- Emitter- Base Voltage VEBO
- 5 V
- Gain Bandwidth Product fT
- 2 MHz
- Height
- 2.38 mm
- Length
- 6.73 mm
- Maximum DC Collector Current
- 10 A
- Maximum Operating Temperature
- + 150 C
- Minimum Operating Temperature
- - 55 C
- Mounting Style
- SMD/SMT
- Package / Case
- TO-252-3
- Packaging
- Cut Tape
- Packaging
- MouseReel
- Packaging
- Reel
- Pd - Power Dissipation
- 20 W
- Product Type
- BJTs - Bipolar Transistors
- Series
- MJD2955
- Technology
- SI
- Transistor Polarity
- PNP
- Unit Weight
- Width
- 6.22 mm
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Jaunākās atsauksmes
Thanks for your feedback!
Emanuela Fe
Teşekkürler
Ashir Hussain
Quick delivery. Secure packing. Excellent product. Thank you
BHADRESH PATEL
Shipped quickly, it was about 1 weeks in Krasnodar. Until the check operation, but to look at everything together
Sergio Garcia Carreon
Works. Find the price of this product is very good
Maxim Krasnov
MJD2955T4G Jaunumi
03/14/2023
03/13/2023
03/13/2023
Saistītie atslēgvārdi MJD2
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