- Daļas numurs
- MJD243G
- Kategorijas
- Bipolar Transistors - BJT
- RoHS
- Datu lapas
- Apraksts
- Bipolar Transistors - BJT 4A 100V 12.5W NPN
MJD243G
Attēli ir tikai norādei
Specifikācijas
- Kategorijas
- Bipolar Transistors - BJT
- Collector- Base Voltage VCBO
- 100 V
- Collector- Emitter Voltage VCEO Max
- 100 V
- Collector-Emitter Saturation Voltage
- 0.6 V
- Configuration
- Single
- Continuous Collector Current
- 4 A
- DC Collector/Base Gain hfe Min
- 40
- Emitter- Base Voltage VEBO
- 7 V
- Gain Bandwidth Product fT
- 40 MHz
- Height
- 2.38 mm
- Length
- 6.73 mm
- Maximum DC Collector Current
- 4 A
- Maximum Operating Temperature
- + 150 C
- Minimum Operating Temperature
- - 65 C
- Mounting Style
- SMD/SMT
- Package / Case
- TO-252-3
- Packaging
- Tube
- Pd - Power Dissipation
- 12.5 W
- Product Type
- BJTs - Bipolar Transistors
- Series
- MJD243
- Technology
- SI
- Transistor Polarity
- NPN
- Unit Weight
- Width
- 6.22 mm
Porduct kategorija
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Jaunākās atsauksmes
goods very well received very good quality
Fabrice Cubaynes
Takes 8 days to Japan. Good!
Alex Fragkos
packed pretty good, all is ok,-seller.
Julianah Yungkim
Thank You all fine, packed very well
Ulrich Bundke
Decent quality, not минвелл certainly, but enough decent
TEIXEIRA
MJD243G Jaunumi
03/14/2023
03/13/2023
03/13/2023
Saistītie atslēgvārdi MJD2
- MJD243G Integrēta
- MJD243G RoHS
- MJD243G PDF datu lapa
- MJD243G Datu lapas
- MJD243G Daļa. \ T
- MJD243G Pirkt
- MJD243G Izplatītājs
- MJD243G PDF
- MJD243G Komponents
- MJD243G IC
- MJD243G Lejupielādēt PDF failu
- MJD243G Lejupielādēt datu lapu
- MJD243G Piegāde
- MJD243G Piegādātājs
- MJD243G Cena
- MJD243G Datu lapas
- MJD243G Attēls
- MJD243G Bilde
- MJD243G Inventarizācija
- MJD243G Krājumi
- MJD243G Oriģināls
- MJD243G Lētākais
- MJD243G Teicami
- MJD243G Bez svina
- MJD243G Specifikācija
- MJD243G Karstie piedāvājumi
- MJD243G Break cena
- MJD243G Tehniskie dati
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