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MJD210T4G

MJD210T4G
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Specifikācijas

Kategorijas
Bipolar Transistors - BJT
Collector- Base Voltage VCBO
40 V
Collector- Emitter Voltage VCEO Max
25 V
Collector-Emitter Saturation Voltage
1.8 V
Configuration
Single
Continuous Collector Current
5 A
DC Collector/Base Gain hfe Min
70
Emitter- Base Voltage VEBO
8 V
Gain Bandwidth Product fT
65 MHz
Height
2.38 mm
Length
6.73 mm
Maximum DC Collector Current
5 A
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Package / Case
TO-252-3
Packaging
Cut Tape
Packaging
MouseReel
Packaging
Reel
Pd - Power Dissipation
12.5 W
Product Type
BJTs - Bipolar Transistors
Series
MJD210
Technology
SI
Transistor Polarity
PNP
Unit Weight
Width
6.22 mm

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Jaunākās atsauksmes

Uzrakstiet savu Reivew
it is safe and sound all, thank you seller!
Everything is excellent! recommend this seller!
Works. Find the price of this product is very good
Good product. Very small and well built. Ii is not produce any kind of. nterferences RFi. Quick delivery
Thank you for the help in the selection of the correct driver, connect, works, not heated perfectly!
Vairāk

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