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MJD253-1G

MJD253-1G
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Specifikācijas

Kategorijas
Bipolar Transistors - BJT
Collector- Base Voltage VCBO
100 V
Collector- Emitter Voltage VCEO Max
100 V
Collector-Emitter Saturation Voltage
0.6 V
Configuration
Single
Continuous Collector Current
4 A
DC Collector/Base Gain hfe Min
40
Emitter- Base Voltage VEBO
7 V
Gain Bandwidth Product fT
40 MHz
Height
2.38 mm
Length
6.73 mm
Maximum DC Collector Current
4 A
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Package / Case
IPAK-3
Packaging
Tube
Pd - Power Dissipation
12.5 W
Product Type
BJTs - Bipolar Transistors
Series
MJD253
Technology
SI
Transistor Polarity
PNP
Unit Weight
Width
6.22 mm

Porduct kategorija

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Jaunākās atsauksmes

Uzrakstiet savu Reivew
everything as it is written in the description of the same deductible prodovtsu deserved
it is safe and sound all, thank you seller!
Works. Find the price of this product is very good
Thank you for the help in the selection of the correct driver, connect, works, not heated perfectly!
receiver the timers in good condition with No bent legs due too the good package. However i haven teste Them All but they seem to have No disaffects.
Vairāk

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Saistītie atslēgvārdi MJD2

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