- Daļas numurs
- MJD253T4G
- Kategorijas
- Bipolar Transistors - BJT
- RoHS
- Datu lapas
- Apraksts
- Bipolar Transistors - BJT 4A 100V 12.5W PNP
MJD253T4G
Attēli ir tikai norādei
Specifikācijas
- Kategorijas
- Bipolar Transistors - BJT
- Collector- Base Voltage VCBO
- 100 V
- Collector- Emitter Voltage VCEO Max
- 100 V
- Collector-Emitter Saturation Voltage
- 0.6 V
- Configuration
- Single
- Continuous Collector Current
- 4 A
- DC Collector/Base Gain hfe Min
- 40
- Emitter- Base Voltage VEBO
- 7 V
- Gain Bandwidth Product fT
- 40 MHz
- Height
- 2.38 mm
- Length
- 6.73 mm
- Maximum DC Collector Current
- 4 A
- Maximum Operating Temperature
- + 150 C
- Minimum Operating Temperature
- - 65 C
- Mounting Style
- SMD/SMT
- Package / Case
- TO-252-3
- Packaging
- Reel
- Packaging
- Cut Tape
- Packaging
- MouseReel
- Pd - Power Dissipation
- 12.5 W
- Product Type
- BJTs - Bipolar Transistors
- Series
- MJD253
- Technology
- SI
- Transistor Polarity
- PNP
- Width
- 6.22 mm
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Jaunākās atsauksmes
goods delivered was отслеживался very fast (башкирию 7 days) excellent дошло seller in excellent condition all recommend!!!!
Kathrin Leibfritz
Thank you for the help in the selection of the correct driver, connect, works, not heated perfectly!
สิทธิศักดิ์ วันดี
the photo in comparison with cheap. Delivery fast
Kaido Kevvai
The timer is running. 10 PCS. Packed properly.
Karina Erdmann
Seems well have not tested
Hazel Gooby
MJD253T4G Jaunumi
03/14/2023
03/13/2023
03/13/2023
Saistītie atslēgvārdi MJD2
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- MJD253T4G Specifikācija
- MJD253T4G Karstie piedāvājumi
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- MJD253T4G Tehniskie dati
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