Daļas numurs FF225R17ME4 Kategorijas IGBT Modules RoHS Datu lapas FF225R17ME4 Apraksts IGBT Modules IGBT 1700V 225A
Kategorijas IGBT Modules Collector- Emitter Voltage VCEO Max 1700 V Collector-Emitter Saturation Voltage 1.95 V Configuration Dual Continuous Collector Current at 25 C 340 A Gate-Emitter Leakage Current 400 nA Maximum Gate Emitter Voltage 20 V Maximum Operating Temperature + 150 C Minimum Operating Temperature - 40 C Mounting Style Chassis Mount Package / Case Module Packaging Tray Part # Aliases Pd - Power Dissipation 1500 W Product IGBT Silicon Modules Product Type IGBT Modules Technology SI