FF225R12ME4PBPSA1

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Specifikācijas

Kategorijas
IGBT Modules
Collector- Emitter Voltage VCEO Max
1.2 kV
Collector-Emitter Saturation Voltage
1.85 V
Configuration
Half Bridge
Continuous Collector Current at 25 C
450 A
Gate-Emitter Leakage Current
400 nA
Maximum Gate Emitter Voltage
20 V
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 40 C
Mounting Style
Chassis Mount
Package / Case
Module
Packaging
Tray
Part # Aliases
Pd - Power Dissipation
20 mW
Product
IGBT Silicon Modules
Product Type
IGBT Modules
Technology
SI

Jaunākās atsauksmes

Thanks for your feedback!

goods very well received very good quality

Thank you! Received consistent. Long Service. Walking in Russia! Seller recommend!!!

Takes 8 days to Japan. Good!

it is safe and sound all, thank you seller!

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