Daļas numurs FF225R12ME4PBPSA1 Kategorijas IGBT Modules RoHS Datu lapas FF225R12ME4PBPSA1 Apraksts IGBT Modules MEDIUM POWER ECONO
Kategorijas IGBT Modules Collector- Emitter Voltage VCEO Max 1.2 kV Collector-Emitter Saturation Voltage 1.85 V Configuration Half Bridge Continuous Collector Current at 25 C 450 A Gate-Emitter Leakage Current 400 nA Maximum Gate Emitter Voltage 20 V Maximum Operating Temperature + 150 C Minimum Operating Temperature - 40 C Mounting Style Chassis Mount Package / Case Module Packaging Tray Part # Aliases Pd - Power Dissipation 20 mW Product IGBT Silicon Modules Product Type IGBT Modules Technology SI